818-BB Mai karɓar haske

818-BB jerin m photodetector ne mai tsada kayan aikin bincike da ya dace da yawa high-gudun aikace-aikace kamar duba siginar daidaitawa Q, kulle mold ko sauri modulating laser da kuma picosecond laser daidaitawa.

Silicon, UV Silicon, GaAs da InGaAs sigar

Up lokaci har zuwa 35 ps

Amplifier detector samar da har zuwa 26 dB riba

Fiber coupling zaɓuɓɓuka sa daidaitawa sauki

Kwatanta	samfurin
	818-BB-21Mai ganowa mai ƙarfin lantarki, 300-1100 nm, silicon, 1.2 GHz
	818-BB-27Mai ganowa mai ƙarfin lantarki, 200-1100nm, silicon, 200 MHz
	818-BB-30Mai ganowa mai ƙarfin lantarki, 1000-1600nm, InGaAs, 2 GHz
	818-BB-31Mai ganowa mai ƙarfin lantarki, 1000-1600nm, InGaAs, 1.5 GHz, FC shigarwa jack
	818-BB-35Mai ganowa mai ƙarfin lantarki, 1000-1650nm, InGaAs, 12.5 GHz
	818-BB-36Mai binciken lantarki mai ƙarfi, 1475-2100 nm, InGaAs mai ƙarfi, 12.5 GHz
	818-BB-36FMai binciken lantarki mai ƙarfi, 1475-2100 nm, InGaAs mai ƙarfi, 12.5 GHz, FC / UPC
	818-BB-40Mai ganowa mai ƙarfin lantarki, 300-1100nm, silicon, 25 MHz
	818-BB-45Mai ganowa mai ƙarfin lantarki, 400-900nm, GaAs, 12.5 GHz
	818-BB-45AFAmplifier mai ganowa, AC haɗuwa, 400-900nm, GaAs, 9 GHz, FC / UPC

Bayani na samfurin

Silicon Photodetectors

samfurin	818-BB-21	818-BB-27	818-BB-40
Mai ganowa kayan	Silicon	UV Enhanced Silicon	Silicon
bias ƙarfin lantarki / bias ƙarfin lantarki	9 V	24 V	24 V
Nau'in Mai Ganowa	PIN	PIN	PIN
Mai ganowa Diameter	0.4 mm	2.55 mm	4.57 mm
Karɓar kusurwa	10°	50°	60°
Wavelength kewayon	300-1100 nm	200-1100 nm	350-1100 nm
Bandwidth na 3 dB
Rise Lokaci	<300 ps	3ns	<30 ns
Amsa	0.47 A/W @ 830 nm	0.56 A/W @ 830 nm	0.6 A/W @ 830 nm
Fitarwa Connector	BNC	BNC	BNC
NEP	<0.01 pW/√Hz	<0.1 pW/√Hz	<0.09 pW/√Hz
Saturated halin yanzu	3 mA	2.5 mA	2 mA
haɗuwa Capacitor	<1.5 pF	<25 pF	<45 pF
Reverse karya ƙarfin lantarki	20 V	150 V	50 V
nau'in thread	8-32 and M4	8-32 and M4	8-32 and M4

GaAs and InGaAs Photodetectors

samfurin	818-BB-30	818-BB-31	818-BB-35	818-BB-45	818-BB-51
Mai ganowa kayan	InGaAs	InGaAs	InGaAs	GaAs	Extended InGaAs
bias ƙarfin lantarki / bias ƙarfin lantarki	6 V	6 V	6 V	3 V	3 V
Nau'in Mai Ganowa	PIN	PIN	PIN	PIN	PIN
Mai ganowa Diameter	0.1 mm	0.1 mm	0.032 mm		0.040 mm
Karɓar kusurwa	20°	20°	30°	15°	20°
Wavelength kewayon	1000-1600 nm	1000-1600 nm	1000-1650 nm	500-890 nm	830-2150 nm
Bandwidth na 3 dB	DC to 2 GHz	DC to 2 GHz	DC to 15 GHz	DC to 12.5 GHz	DC to 10 GHz
Rise Lokaci	175 ps	175 ps	25 ps	30 ps	28 ps
Amsa	0.8 A/W @ 1300 nm	0.9 A/W @ 1300 nm	0.88 A/W @ 1550 nm	0.53 A/W @ 830 nm	1.3 A/W @ 2.0 µm
Fitarwa Connector	BNC	BNC	SMA	SMA	SMA
NEP	<0.1 pW/√Hz	0.1 pW/√Hz	<0.04 pW/√Hz	<0.02 pW/√Hz at 830 nm	<0.44 pW/√Hz @ 2000 nm
Saturated halin yanzu	5 mA	10 mA	10 mA	10 mA
haɗuwa Capacitor	<0.75 pF	<1.25 pF	<0.12 pF	<0.3 pF
Reverse karya ƙarfin lantarki	25 V	25 V	25 V	30 V
nau'in thread	8-32 and M4	8-32 and M4	8-32 and M4	8-32 and M4	8-32 and M4

Abubuwa

Silicon Version da kuma Purplewaje karfafa siliconsigar

818-BB-20、 -21 da -40 sun ƙunshi sararin samaniya mai kyauta, ƙananan yankuna da manyan masu binciken silicon tare da lokacin haɓaka tsakanin 300 ps-1.5 ns. Baya ga 818-BB-40, kowane na'urar ta haɗa da samfurin wutar lantarki mai haɗin kai wanda ya ƙunshi daidaitaccen batirin lithium na 3 V da fitarwar haɗin BNC na 50 ohm. Baturin za a iya sauya shi da sauƙi, a lokacin da ba a yi amfani da shi ba, yanke haɗin mai ganowa da shigarwar oscilloscope zai iya tsawaita rayuwar batir. 818-BB-40 ya zo da samar da wutar lantarki na waje na 24 VDC. 818-BB-27ta haɓakaSilicon detector da aka tsara da ultraviolet amsa, saboda haka ya dace da Nd: YAG, Nd: YLF ko wasu neodymium gilashin lasers huɗu harmonic da kuma quasi-molecular lasers. Bugu da ƙari, faɗin yankin tasiri da saurin lokacin amsawa ya sa ya zama mai ganowa na yau da kullun a cikin 200 zuwa 1100 nm bandwidth. Don samun amsa mai sauri, wannan mai bincike yana da 24 VDC na waje.

UV-Enhanced Silicon Free Space Detector

The 818-BB-27 consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large active area and fast response time make it an excellent general-purpose biased detector for the 200 to 1100 nm wavelength region. To attain its fast response, this detector comes with a 24 VDC external power supply.

InGaAs Free Space Detectors

The 818-BB-30, -31, and -35
consist of free-space, small and large area
InGaAs detectors, with rise times ranging from 300 ps to 1.5 ns for covering the 1000-1600 nm wavelength range. Each unit includes a built-in bias supply consisting of standard 3 V lithium cells and a 50 ohm BNC connector output. The 818-BB-51 features an extended InGaAs photodetector with a wavelength range of
1475–2100 nm.

GaAs da InGaAs sigar

818-BB-30、 -31, -35, -45 da -51 sun ƙunshi na'urorin ganowa na GaAs ko InGaAs masu kyauta, ƙananan yankuna da manyan yankuna tare da lokacin haɓaka tsakanin 300 ps-1.5 ns. Kowane na'urar ta haɗa da wani gina-a biased wutar lantarki, wanda ya ƙunshi misali 3 V lithium baturi da 50 ohm BNC connector fitarwa. Baturin za a iya sauya shi da sauƙi, a lokacin da ba a yi amfani da shi ba, yanke haɗin mai ganowa da shigarwar oscilloscope zai iya tsawaita rayuwar batir.

Optical Jigilar Shigarwa

Ana iya amfani da ramin 8-32 a kasa na mai karɓar haske na 818-BB don shigar da matattarar gani.

Kula da kariya ta ESD

Wadannan masu bincike suna da sauƙin lalacewa daga sakin lantarki (ESD). Yi amfani da kariya ta ESD kamar FK-STRAP yayin cirewa da aiki da waɗannan na'urorin.

Up lokaci har zuwa 25 ps

818-BB-35 da 818-BB-45 Photodiode Detector Modules suna ba da mafita mai ƙarancin kuɗi don ma'auni mai sauri tare da bandwidth na 12.5 GHz. Wadannan masu bincike suna dacewa da aikace-aikacen daidaitawa Q da binciken fitarwar laser mai sauri wanda ke buƙatar lokacin tashin masu bincike na <25 ps (<30 ps don 818-BB-45). Wadannan masu bincike suna kuma amfani da batirin lithium na 3 V (an ba da shi).