Ba kamar sauran tushen ba, lu'ulu'u na GaSe sun fi dacewa da aikace-aikacen lantarki da na gani a filin kayan 2D. An haɗa lu'ulu'u na GaSe (gallium selenide) ta hanyar fasahohin ci gaba daban-daban uku, wato ci gaban Bridgman, jigilar tururi na sinadarai (CVT), da ci gaban yankin kwarara, don inganta girman hatsi da rage yawan lahani. Babban girman hatsi da lalacewar da aka sarrafa suna ba ku damar samar da monolayers ta hanyar tsari mai sauƙi tare da babban amfani, samun babban motsi na lantarki, da lokutan sake haɗuwa mai kyau. Ta tsoho, 2Dsemiconductors Amurka yana ba da Bridgman ci gaban GaSe crystals yanke a 0001 shugabanci shirye don exfoliation. Koyaya, idan bincikenku yana buƙatar CVT ko yankin gudanarwa wanda aka girma GaSe don Allah a sauke bayanin kula yayin dubawa.
Abubuwan da ke cikin vdW GaSe crystals - 2Dsemiconductors Amurka

Hanyar girma tana da mahimmanci> Yankin gudanarwa ko hanyar girma ta CVT? Gurɓataccen halides da lahani a cikin lu'ulu'u masu layered sanannun dalili ne na rage motsi na lantarki, rage amsar anisotropic, rashin haɗuwa da e-h, ƙananan fitar da PL, da ƙananan sha na gani. Fasahar yankin flux fasaha ce mai kyautar halide da ake amfani da ita don haɗa lu'ulu'u na vdW na gaske. Wannan hanyar ta bambanta kanta da fasahar sufuri na tururi na sinadarai (CVT) a cikin wannan batun: CVT hanyar haɓaka ce mai sauri (~ makonni 2) amma tana nuna ingancin crystalline mai rauni kuma haɓaka lahani ya kai 1E11 zuwa 1E12 cm-2. Sabanin haka, hanyar kwarara tana ɗaukar dogon (~ watanni 3) lokacin girma, amma tana tabbatar da jinkirin crystallization don cikakken tsarin atomic, da kuma girman crystal kyauta tare da haɗin hankali na lahani kamar 1E9 - 1E10 cm-2. A lokacin duba kawai jihar irin tsarin girma da aka fi so. Sai dai idan aka ambata akasin haka, 2Dsemiconductors suna jigilar da lu'ulu'u na yankin Flux a matsayin zaɓi na tsoho.

1. Jaridar Nanoelectronics da Optoelectronics Vol. 7, 1-3, 2012
2. ACS Nano, 2012, 6 (7), shafi 5988 - 5994