Semiconductor analog na graphene: An haɗa Graphene oxide a wuraren R&D ɗinmu ta amfani da fasahar Hummer ta gyara a cikin mafita mai rarraba ruwa. Fasahar girma ta jaddada kan rage yawan lahani don samar da kayan aiki na gani da haɓaka matsakaicin girman hatsi (girman flake). Ba kamar sauran oxides na graphene ba, wannan samfurin yana aiki da gani kuma yana shirye don binciken 2D semiconductor. Kowane rukuni na ci gaba an bayyana shi ta hanyar Auger electron da x-ray photoelectron spectroscopy don ƙayyade stoichometry; Raman, PL spectroscopy, da kuma sha na gani don gwajin kaddarorin gani; AFM ma'auni don atomic flatness. Samfurin yana nuna PL a ~ 2.5 eV, ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan ƙananan Samfurin ya zo cikakke da oxygen kuma za a iya daidaita kaddarorin kayan ta hanyar maganin zafi mai sauƙi. Samfurin ya dace da samar da monolayer a kan substrates daban-daban a cikin mintuna 2-10. An tsara yawan mafita na monolayer a 92 mg / L.